IRF520 N-Channel Power MOSFET
9.2A Continuous ----100V ----0.270 Ohm Case TO-220
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
It is designed for applications such as switching regulators, switching convertors, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Used in CB Final


Mfg: SGS-THOMSON
Part# IRF520
Stk.209226