The 2SC1969 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.TO-220

Features:
High Power Gain: Gpe >/= 12dB (VCC = 12V, PO = 16W, f = 27MHz)
Ability to Withstand Infinite VSWR Load when Operated at:
VCC = 16V, PO = 20W, f = 27MHz


Application:
10 to 14 Watt Output Power Class AB Amplifier Applications in HF Band


Mfg.Mitsubishi
Part# 2SC1969
Stk:92031-JT

ON WARRANTY ON TRANSISTORS